| 型号/型号规格 | 分类 | 品牌 | 封装 | 批号 | 数量 | 询价 | ||
|---|---|---|---|---|---|---|---|---|
| MMBZ6V8ALT1G |
|
MOS(场效应管) |
JG-SEMI/台湾金锆 |
SOT-23 |
25+ |
30000 |
||
| FDS9958 |
|
MOS(场效应管) |
JG-SEMI/台湾金锆 |
SOP-8 |
25+ |
30000 |
||
| STN3PF06 |
|
MOS(场效应管) |
JG-SEMI/台湾金锆 |
SOT-223 |
25+ |
30000 |
||
| NCE40P07S | MOS(场效应管) |
JG-SEMI/台湾金锆 |
SOP-8 |
25+ |
30000 |
|||
| 2N7002V |
|
MOS(场效应管) |
JG-SEMI/台湾金锆 |
SOT-563 |
25+ |
30000 |
||
| IPD068P03L3G |
|
MOS(场效应管) |
JG-SEMI/台湾金锆 |
TO-252 |
25+ |
30000 |
||
| PZTA06 |
|
MOS(场效应管) |
JG-SEMI/台湾金锆 |
SOT-223 |
25+ |
30000 |
||
| PZTA64 | MOS(场效应管) |
JG-SEMI/台湾金锆 |
SOT223 |
25+ |
30000 |
|||
| NCE30H10K |
|
MOS(场效应管) |
JG-SEMI/台湾金锆 |
TO-252 |
25+ |
30000 |
||
| IPD50P03P4L-11 |
|
MOS(场效应管) |
JG-SEMI/台湾金锆 |
TO-252 |
25+ |
30000 |
||
| IRFR5305TRPBF | MOS(场效应管) |
JG-SEMI/台湾金锆 |
TO-252 |
25+ |
30000 |
|||
| DMN24H11DS-7 | MOS(场效应管) |
JG-SEMI/台湾金锆 |
SOT-23 |
25+ |
30000 |
|||
| IRFL9110TRPBF |
|
MOS(场效应管) |
JG-SEMI/台湾金锆 |
SOT-223 |
25+ |
30000 |
||
| Si4559ADY-T1-GE3 | MOS(场效应管) |
JG-SEMI/台湾金锆 |
SOP-8 |
25+ |
30000 |
|||
| IRFR3806TRPBF |
|
MOS(场效应管) |
JG-SEMI/台湾金锆 |
TO-252 |
25+ |
30000 |
||
| FDS8958A |
|
MOS(场效应管) |
JG-SEMI/台湾金锆 |
SOP-8 |
25+ |
30000 |
||
| IRF7842TRPBF |
|
MOS(场效应管) |
JG-SEMI/台湾金锆 |
SOP-8 |
25+ |
30000 |
||
| IRF7313TRPBF |
|
MOS(场效应管) |
JG-SEMI/台湾金锆 |
SOP-8 |
25+ |
30000 |
||
| FDMS8692 |
|
MOS(场效应管) |
JG-SEMI/台湾金锆 |
PQFN-8 |
25+ |
30000 |
||
| FDD6780 |
|
MOS(场效应管) |
JG-SEMI/台湾金锆 |
TO252 |
25+ |
30000 |
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