| 型号/型号规格 | 分类 | 品牌 | 封装 | 批号 | 数量 | 询价 | ||
|---|---|---|---|---|---|---|---|---|
| LESD8D24CT5G |
|
MOS(场效应管) |
JG-SEMI/台湾金锆 |
SOD-882 |
25+ |
30000 |
||
| AONR21357 |
|
MOS(场效应管) |
JG-SEMI/台湾金锆 |
QFN3X3-8 |
25+ |
30000 |
||
| QN3109M6N |
|
MOS(场效应管) |
JG-SEMI/台湾金锆 |
PRPAK5*6 |
25+ |
20000 |
||
| SQD50N10-8M9L_GE3 |
|
MOS(场效应管) |
JG-SEMI/台湾金锆 |
TO-252 |
25+ |
30000 |
||
| NVJD5121NT1G |
|
MOS(场效应管) |
JG-SEMI/台湾金锆 |
SOT-363 |
25+ |
30000 |
||
| NSR02100HT1G |
|
MOS(场效应管) |
JG-SEMI/台湾金锆 |
SOD-323 |
25+ |
30000 |
||
| AMS1117-3.3V | MOS(场效应管) |
JG-SEMI/台湾金锆 |
SOT-89 |
25+ |
30000 |
|||
| FDMA507PZ |
|
MOS(场效应管) |
JG-SEMI/台湾金锆 |
WDFN-6 |
25+ |
30000 |
||
| NCE4606 |
|
MOS(场效应管) |
JG-SEMI/台湾金锆 |
SOP-8 |
25+ |
30000 |
||
| SI4564DY-T1-GE3 |
|
MOS(场效应管) |
JG-SEMI/台湾金锆 |
SOP-8 |
25+ |
30000 |
||
| IRFR5410TRPBF |
|
MOS(场效应管) |
JG-SEMI/台湾金锆 |
TO-252 |
25+ |
30000 |
||
| IRFHM8326TRPBF | MOS(场效应管) |
JG-SEMI/台湾金锆 |
PQFN3x3 |
25+ |
30000 |
|||
| IRFH9310TRPBF |
|
MOS(场效应管) |
JG-SEMI/台湾金锆 |
PQFN5x6 |
25+ |
30000 |
||
| IRFH7440TRPBF |
|
MOS(场效应管) |
JG-SEMI/台湾金锆 |
PQFN5x6 |
25+ |
30000 |
||
| IRFHM8334TRPBF | MOS(场效应管) |
JG-SEMI/台湾金锆 |
PQFN3x3 |
25+ |
30000 |
|||
| IRF7241TRPBF |
|
MOS(场效应管) |
JG-SEMI/台湾金锆 |
SOP-8 |
25+ |
30000 |
||
| IRF7389TRPBF |
|
MOS(场效应管) |
JG-SEMI/台湾金锆 |
SOP-8 |
25+ |
30000 |
||
| IRF7205TRPBF |
|
MOS(场效应管) |
JG-SEMI/台湾金锆 |
SOP-8 |
25+ |
30000 |
||
| FDD6685 |
|
MOS(场效应管) |
JG-SEMI/台湾金锆 |
TO252 |
25+ |
30000 |
||
| AOD2916 |
|
MOS(场效应管) |
JG-SEMI/台湾金锆 |
TO252 |
25+ |
30000 |
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